BFP 450 H6433

BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Product description The BFP450 is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fourth generation RF bipolar transistor family. Its transition frequency fT of 24 GHz, collector design and high linearity characteristics make the device suitable for energy efficiency applications up to 3 GHz. It remains cost competitive without compromising on ease of use. Feature list • • • Minimum noise figure NFmin = 1.7 dB at 1.9 GHz, 3 V, 50 mA High gain Gma = 15.5 dB at 1.9 GHz, 3 V, 90 mA OIP3 = 31 dBm at 1.9 GHz, 3 V, 90 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • • Broadband amplifiers Low noise, high linearity amplifiers for sub-1 GHz ISM band applications Device information Table 1 Part information Product name / Ordering code Package Pin configuration BFP450 / BFP450H6327XTSA1 SOT343 1=B 2=E 3=C 4=E Marking Pieces / Reel ANs 3000 BFP450 / BFP450H6433XTMA1 10000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 2.0 2019-01-25 BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 3.4 3.5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4 Package information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Datasheet 2 Revision 2.0 2019-01-25 BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Absolute maximum ratings 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. Collector emitter voltage VCEO – Unit Note or test condition V Open base Max. 4.5 4.1 TA = -55 °C, open base Collector emitter voltage VCES 15 E-B short circuited Collector base voltage VCBO 15 Open emitter Emitter base voltage VEBO 1.5 Open collector Base current IB 10 Collector current IC 170 Total power dissipation 1) Ptot Junction temperature TJ Storage temperature TStg mA – 500 mW TS ≤ 90 °C 150 °C – -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 Revision 2.0 2019-01-25 BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Thermal characteristics 2 Thermal characteristics Table 3 Thermal resistance Parameter Symbol Junction - soldering point RthJS Values Min. Typ. Max. – 120 – Unit Note or test condition K/W – 600 500 Ptot [mW] 400 300 200 100 0 0 50 100 150 Ts [ °C] Figure 1 Datasheet Total power dissipation Ptot = f(TS) 4 Revision 2.0 2019-01-25 BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Electrical characteristics 3 Electrical characteristics 3.1 DC characteristics Table 4 DC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Collector emitter breakdown voltage V(BR)CEO 4.5 5 – V IC = 1 mA, IB = 0, open base Collector emitter leakage current ICES – – 1 1 2) 30 2) μA nA VCE = 15 V, VBE = 0, VCE = 3 V, VBE = 0, E-B short circuited Collector base leakage current ICBO 1 30 2) nA VCB = 3 V, IE = 0, open emitter Emitter base leakage current IEBO 0.05 3 2) μA VEB = 0.5 V, IC = 0, open collector DC current gain hFE 95 85 130 120 60 50 3.2 General AC characteristics Table 5 General AC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. VCE = 4 V, IC = 50 mA, VCE = 3 V, IC = 90 mA, pulse measured Unit Note or test condition Transition frequency fT 18 24 – GHz VCE = 3 V, IC = 90 mA, f = 1 GHz Collector base capacitance CCB – 0.48 0.8 pF VCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded Collector emitter capacitance CCE 1.2 – Emitter base capacitance CEB 1.7 2 VCE = 3 V, VBE = 0, f = 1 MHz, base grounded VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded Maximum values not limited by the device but by the short cycle time of the 100% test. Datasheet 5 Revision 2.0 2019-01-25 BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Electrical characteristics 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C. VC Top View Bias-T OUT E C B E VB Bias-T (Pin 1) IN Figure 2 Testing circuit Table 6 AC characteristics, VCE = 3 V, f = 150 MHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass – – dB IC = 90 mA IC = 50 mA dBm 30.5 19 ZS = ZL = 50 Ω, IC = 90 mA AC characteristics, VCE = 3 V, f = 450 MHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass – Typ. 29 25 Unit 30 19 6 Note or test condition Max. – dB 1.55 27.5 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Datasheet 35.5 33.5 Note or test condition Max. 1.55 32 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Table 7 Typ. Unit IC = 90 mA IC = 50 mA dBm ZS = ZL = 50 Ω, IC = 90 mA Revision 2.0 2019-01-25 BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Electrical characteristics Table 8 AC characteristics, VCE = 3 V, f = 900 MHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass – dB IC = 90 mA IC = 50 mA dBm 30.5 19 Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gma |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass – Typ. 18 14 Unit ZS = ZL = 50 Ω, IC = 90 mA Note or test condition Max. – dB 1.65 17 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB IC = 90 mA IC = 50 mA dBm 31 19 ZS = ZL = 50 Ω, IC = 90 mA AC characteristics, VCE = 3 V, f = 1.9 GHz Parameter Symbol Values Min. – Typ. Power gain • Maximum power gain • Transducer gain Gma |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 1.7 14 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB 31 19 Datasheet – AC characteristics, VCE = 3 V, f = 1.5 GHz Parameter Table 10 23.5 19 Note or test condition Max. 1.6 23 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Table 9 Typ. Unit 7 15.5 11.5 Unit Note or test condition Max. – dB IC = 90 mA IC = 50 mA dBm ZS = ZL = 50 Ω, IC = 90 mA Revision 2.0 2019-01-25 BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Electrical characteristics Table 11 AC characteristics, VCE = 3 V, f = 2.4 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gma |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 1.8 12 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB 30 19 Table 12 – Typ. 13.5 9.5 Symbol Max. – dB IC = 90 mA IC = 50 mA dBm Values Min. – Typ. Power gain • Maximum power gain • Transducer gain Gma |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 2.05 9 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB 29.5 18.5 Datasheet Note or test condition ZS = ZL = 50 Ω, IC = 90 mA AC characteristics, VCE = 3 V, f = 3.5 GHz Parameter Note: Unit 10 6 Unit Note or test condition Max. – dB IC = 90 mA IC = 50 mA dBm ZS = ZL = 50 Ω, IC = 90 mA Gms = IS21 / S12I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz. 8 Revision 2.0 2019-01-25 BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Electrical characteristics 3.4 Characteristic DC diagrams 160 1.90mA 140 1.71mA 1.52mA 120 100 1.14mA 80 0.95mA C [mA] 1.33mA I 0.76mA 60 0.57mA 40 0.38mA 20 0 0.19mA 0 1 2 3 4 5 VCE [V] Figure 3 Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter 120 110 100 hFE 90 80 70 60 50 0.1 1 10 100 1000 IC [mA] Figure 4 DC current gain hFE = f(IC), VCE = 3 V Datasheet 9 Revision 2.0 2019-01-25 BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Electrical characteristics 1000 100 IC [mA] 10 1 0.1 0.01 0.6 0.65 0.7 0.75 0.8 0.85 0.9 VBE[V] Figure 5 Collector current vs. base emitter forward voltage IC = f(VBE), VCE = 2 V Figure 6 Base current vs. base emitter forward voltage IB = f(VBE), VCE = 2 V Datasheet 10 Revision 2.0 2019-01-25 BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Electrical characteristics 1.E-05 IB[A] 1.E-06 1.E-07 1.E-08 1.E-09 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VEB [V] Figure 7 Datasheet Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 2 V 11 Revision 2.0 2019-01-25 BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Electrical characteristics 3.5 Characteristic AC diagrams 30 25 4.00V 3.00V 2.00V fT [GHz] 20 15 1.00V 10 5 0 Figure 8 0 20 40 60 80 100 IC [mA] 120 140 160 180 160 180 Transition frequency fT = f(IC), f = 1 GHz, VCE = parameter 34 32 OIP3 [dBm] 30 28 3V, 0.9GHz 4V, 0.9GHz 3V, 1.9GHz 4V, 1.9GHz 26 24 22 20 18 0 20 40 60 80 100 I [mA] 120 140 C Figure 9 Datasheet 3rd order intercept point OIP3 = f(IC), ZS = ZL = 50 Ω, VCE, f = parameters 12 Revision 2.0 2019-01-25 BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Electrical characteristics 1.2 1 Ccb [pF] 0.8 0.6 0.4 0.2 0 0 0.5 1 1.5 2 V CB Figure 10 2.5 3 3.5 4 [V] Collector base capacitance CCB = f(VCB), f = 1 MHz 42 39 36 33 30 G ms G [dB] 27 24 21 Gma 18 15 12 |S |2 21 9 6 3 0 Figure 11 Datasheet 0 1 2 3 f [GHz] 4 5 6 Gain Gma, Gms, IS21I2 = f(f), VCE = 3 V, IC = 90 mA 13 Revision 2.0 2019-01-25 BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Electrical characteristics 39 0.15GHz 36 33 30 0.45GHz 27 G [dB] 24 0.90GHz 21 18 1.50GHz 1.90GHz 2.40GHz 15 12 3.50GHz 9 5.50GHz 6 3 0 Figure 12 0 20 40 60 80 100 120 IC [mA] 140 160 180 200 Maximum power gain Gmax = f(IC), VCE = 3 V, f = parameter in GHz 39 36 0.15GHz 33 30 0.45GHz 27 G [dB] 24 0.90GHz 21 1.50GHz 1.90GHz 2.40GHz 18 15 12 3.50GHz 9 5.50GHz 6 3 0 0.5 Figure 13 Datasheet 1 1.5 2 2.5 3 VCE [V] 3.5 4 4.5 5 Maximum power gain Gmax = f(VCE), IC = 90 mA, f = parameter in GHz 14 Revision 2.0 2019-01-25 BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Electrical characteristics 1 1.5 0.5 6 5 0.4 8 7 9 2 10 4 3 0.3 3 0.2 4 5 2 0.03 to 10 GHz 0.1 10 1 0.1 0 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5 90 mA 50 mA −0.1 −10 −0.2 −5 −4 −0.3 −3 −0.4 −0.5 −2 −1.5 90 mA 50 mA −1 Figure 14 Input reflection coefficient S11 = f(f), VCE = 3 V, IC = 50 / 90 mA 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 0.45GHz 0.1 0 0.1 10 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5 0.9GHz −0.1 −10 1.9GHz −0.2 2.4GHz I = 50mA −5 −4 c I = 90mA −0.3 c −3 −0.4 −0.5 −2 −1.5 −1 Figure 15 Datasheet Source impedance for minimum noise figure ZS,opt = f(f), VCE = 3 V, IC = 50 / 90 mA 15 Revision 2.0 2019-01-25 BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Electrical characteristics 1 1.5 2 0.5 0.4 6 0.3 8 7 9 10 3 5 4 4 0.2 5 3 0.1 0.03 to 10 GHz 10 2 0.1 0 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5 1 50 mA 90 mA −0.1 −10 −0.2 −5 −4 −0.3 −3 −0.4 −0.5 −2 −1.5 90 mA 50 mA −1 Figure 16 Output reflection coefficient S22 = f(f), VCE = 3 V, IC = 50 / 90 mA 3 2.5 NFmin [dB] 2 1.5 I = 90mA C I = 50mA C 1 0.5 0 Figure 17 Datasheet 0 0.5 1 1.5 f [GHz] 2 2.5 3 Noise figure NFmin = f(f), ZS = ZS,opt, VCE = 3 V, IC = 50 / 90 mA 16 Revision 2.0 2019-01-25 BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Electrical characteristics 3 2.5 NFmin [dB] 2 1.5 f = 2.4GHz f = 1.9GHz 1 f = 0.9GHz f = 0.45GHz 0.5 0 0 20 40 60 80 100 Ic [mA] Figure 18 Noise figure NFmin = f(IC), ZS = ZS,opt, VCE = 3 V, f = parameter in GHz 4.5 4 3.5 NF50 [dB] 3 2.5 f = 2.4GHz 2 f = 1.9GHz f = 0.9GHz 1.5 f = 0.45GHz 1 0.5 0 20 40 60 80 100 Ic [mA] Figure 19 Datasheet Noise figure NF50 = f(IC), ZS = 50 Ω, VCE = 3 V, f = parameter in GHz 17 Revision 2.0 2019-01-25 BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Electrical characteristics 4.5 4 3.5 NF [dB] 3 2.5 2 1.5 ZS = 50Ω Z =Z 1 0.5 S 0 20 40 60 Sopt 80 100 Ic [mA] Figure 20 Note: Datasheet Noise figure NF50 = f(IC), ZS = 50 Ω, NFmin = f(IC), ZS = ZS,opt, VCE = 3 V, f = 1.9 GHz The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. 18 Revision 2.0 2019-01-25 BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Package information SOT343 0.9 ±0.1 Package information SOT343 1.25 ±0.1 0.15 -0.05 +0.10 A 0.1 0.1 MIN. 0.1 2.1 ±0.1 A 2 1 3x +0.10 0.3 -0.05 0.6 -0.05 +0.10 1.3 2 ±0.2 0.1 3 4 0.15 0.2 0.1 MAX. 4 MOLD FLAS H, P ROTRUS ION OR GATE BURRS OF 0.2 MM MAXIMUM P ER S IDE ARE NOT INCLUDED ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ ] Figure 21 Package outline Figure 22 Foot print TYP E CODE NOTE OF MANUFACTURER MONTH YEAR Figure 23 Marking layout example 4 0.2 2.3 8 2 P IN 1 INDEX MARKING 2.15 ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ Figure 24 Datasheet 1.1 ] Tape dimensions 19 Revision 2.0 2019-01-25 BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Revision history Revision history Document version Date of release Description of changes Revision 2.0 2019-01-25 New datasheet layout. Datasheet 20 Revision 2.0 2019-01-25 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2019-01-25 Published by Infineon Technologies AG 81726 Munich, Germany © 2019 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ehy1521536352893 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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